{"title":"RF LDMOS功率晶体管在2.2 GHz宽带cdma中的应用","authors":"A. Wood, W. Brakensiek","doi":"10.1109/RAWCON.1998.709198","DOIUrl":null,"url":null,"abstract":"Wideband CDMA was conceived to carry high bit rate data and video information in addition to voice traffic. The IMT2000 standard has adopted the 2.11 to 2.17 GHz band for this service, posing the design challenge of a higher operating frequency band than the PCS (1.8-1.99 GHz) and wider modulation bandwidth for the signals. This paper describes the results for a 60 W single-ended and a 120 W push-pull RF LDMOS device characterized with W-CDMA signals in the IMT2000 frequency band.","PeriodicalId":226788,"journal":{"name":"Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Application of RF LDMOS power transistors for 2.2 GHz wideband-CDMA\",\"authors\":\"A. Wood, W. Brakensiek\",\"doi\":\"10.1109/RAWCON.1998.709198\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wideband CDMA was conceived to carry high bit rate data and video information in addition to voice traffic. The IMT2000 standard has adopted the 2.11 to 2.17 GHz band for this service, posing the design challenge of a higher operating frequency band than the PCS (1.8-1.99 GHz) and wider modulation bandwidth for the signals. This paper describes the results for a 60 W single-ended and a 120 W push-pull RF LDMOS device characterized with W-CDMA signals in the IMT2000 frequency band.\",\"PeriodicalId\":226788,\"journal\":{\"name\":\"Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RAWCON.1998.709198\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RAWCON.1998.709198","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application of RF LDMOS power transistors for 2.2 GHz wideband-CDMA
Wideband CDMA was conceived to carry high bit rate data and video information in addition to voice traffic. The IMT2000 standard has adopted the 2.11 to 2.17 GHz band for this service, posing the design challenge of a higher operating frequency band than the PCS (1.8-1.99 GHz) and wider modulation bandwidth for the signals. This paper describes the results for a 60 W single-ended and a 120 W push-pull RF LDMOS device characterized with W-CDMA signals in the IMT2000 frequency band.