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引用次数: 12
摘要
本文介绍了一种采用AMI 0.5 μ m 3M/2P n阱标准CMOS工艺实现的高效全波集成电压整流器。整流器利用分离的n阱区动态电压控制，其中主要整流PMOS元件已经实现，以消除锁存和体效应。在测量中，交流输入正弦波在0.5 MHz时峰值为5 V，在1 kOmega负载上产生4.36 V的直流输出，导致测量的功率转换效率为85%。
A high efficiency full-wave rectifier in standard CMOS Technology
In this paper, a high efficiency full-wave integrated voltage rectifier, implemented in AMI 0.5-mum 3M/2P n-well standard CMOS process, is presented. The rectifier takes advantage of the dynamic voltage control of separated n-well regions, where the main rectifying PMOS elements have been implemented, to eliminate latchup and body effect. In measurements, an AC input sinusoid of 5 V peak at 0.5 MHz yield a 4.36 V DC output across a 1 kOmega load, resulting in a measured power conversion efficiency of 85%.
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