{"title":"基于并联串峰技术的高增益2- 11ghz宽带共门LNA设计","authors":"Rohit Goel, Anil Kumar, Mahesh Kumar, Sandeep Kumar","doi":"10.1109/icac353642.2021.9697273","DOIUrl":null,"url":null,"abstract":"A wideband Low Noise amplifier is designed using Common Gate first stage followed by Common Source stage in cascade. The first stage provides a wideband input matching increasing the bandwidth and the second stage provides high gain. The low frequency gain is mainly driven by the output impedance of the first stage while the gain at higher frequencies is due to shunt series peaking technique. The proposed LNA provides high gain greater than 12 dB over the 3-dB bandwidth of 2-11 GHz achieving a maximum gain of 18.09 dB. The minimum NF achieved is 1.15 dB with a good stability over the entire range. The circuit is designed using 90 nm PTM node. The circuit will work well for a wide range of wireless applications.","PeriodicalId":196238,"journal":{"name":"2021 International Conference on Advances in Computing, Communication, and Control (ICAC3)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design of High Gain 2-11 GHz Wideband Common Gate LNA Using Shunt Series Peaking Technique for Wireless Applications\",\"authors\":\"Rohit Goel, Anil Kumar, Mahesh Kumar, Sandeep Kumar\",\"doi\":\"10.1109/icac353642.2021.9697273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband Low Noise amplifier is designed using Common Gate first stage followed by Common Source stage in cascade. The first stage provides a wideband input matching increasing the bandwidth and the second stage provides high gain. The low frequency gain is mainly driven by the output impedance of the first stage while the gain at higher frequencies is due to shunt series peaking technique. The proposed LNA provides high gain greater than 12 dB over the 3-dB bandwidth of 2-11 GHz achieving a maximum gain of 18.09 dB. The minimum NF achieved is 1.15 dB with a good stability over the entire range. The circuit is designed using 90 nm PTM node. The circuit will work well for a wide range of wireless applications.\",\"PeriodicalId\":196238,\"journal\":{\"name\":\"2021 International Conference on Advances in Computing, Communication, and Control (ICAC3)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Advances in Computing, Communication, and Control (ICAC3)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icac353642.2021.9697273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Advances in Computing, Communication, and Control (ICAC3)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icac353642.2021.9697273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of High Gain 2-11 GHz Wideband Common Gate LNA Using Shunt Series Peaking Technique for Wireless Applications
A wideband Low Noise amplifier is designed using Common Gate first stage followed by Common Source stage in cascade. The first stage provides a wideband input matching increasing the bandwidth and the second stage provides high gain. The low frequency gain is mainly driven by the output impedance of the first stage while the gain at higher frequencies is due to shunt series peaking technique. The proposed LNA provides high gain greater than 12 dB over the 3-dB bandwidth of 2-11 GHz achieving a maximum gain of 18.09 dB. The minimum NF achieved is 1.15 dB with a good stability over the entire range. The circuit is designed using 90 nm PTM node. The circuit will work well for a wide range of wireless applications.