低噪音45 GHz HEMT混频器

1985 15th European Microwave Conference Pub Date : 1985-10-01 DOI:10.1109/EUMA.1985.333544

Stephen A. Mass

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引用次数: 1

摘要

利用GaAs HEMT器件研制了一种低噪声的3ghz中频45 GHz混频器。这是第一个超过30 GHz的有源混频器和第一个HEMT混频器。它在2 GHz带宽上实现单位增益，最小SSB噪声系数为7.1 dB，其中包括来自中频放大器的噪声。

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Low-Noise 45 GHz HEMT Mixer

A low-noise 45 GHz mixer with a 3 GHz IF frequency has been developed using a GaAs HEMT device. This is the first active mixer reported above 30 GHz and the first HEMT mixer. It achieves unity gain over a 2 GHz bandwidth and a minimum SSB noise figure of 7.1 dB, including the noise from an IF amplifier.

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来源期刊

1985 15th European Microwave Conference

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