标准220纳米硅制程制造稳健硅光子学平台

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9674005

Anthony J. Rizzo, U. Dave, Alexandre P. Freitas, S. Roberts, Asher Novick, M. Lipson, K. Bergman

{"title":"标准220纳米硅制程制造稳健硅光子学平台","authors":"Anthony J. Rizzo, U. Dave, Alexandre P. Freitas, S. Roberts, Asher Novick, M. Lipson, K. Bergman","doi":"10.1109/GFP51802.2021.9674005","DOIUrl":null,"url":null,"abstract":"We present a fabrication-robust silicon photonics platform compatible with standard 220 nm silicon thickness. Our generalized design methodology shows a 4× energy reduction over standard filter designs and was validated in a 300 mm foundry process, showing a promising avenue for reducing thermal tuning energy.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Fabrication-Robust Silicon Photonics Platform in Standard 220 nm Silicon Processes\",\"authors\":\"Anthony J. Rizzo, U. Dave, Alexandre P. Freitas, S. Roberts, Asher Novick, M. Lipson, K. Bergman\",\"doi\":\"10.1109/GFP51802.2021.9674005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a fabrication-robust silicon photonics platform compatible with standard 220 nm silicon thickness. Our generalized design methodology shows a 4× energy reduction over standard filter designs and was validated in a 300 mm foundry process, showing a promising avenue for reducing thermal tuning energy.\",\"PeriodicalId\":158770,\"journal\":{\"name\":\"2021 IEEE 17th International Conference on Group IV Photonics (GFP)\",\"volume\":\"183 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 17th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GFP51802.2021.9674005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GFP51802.2021.9674005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

我们提出了一个制造稳健的硅光子平台，兼容标准的220纳米硅厚度。我们的通用设计方法显示，与标准滤波器设计相比，能耗降低了4倍，并在300毫米铸造工艺中得到验证，显示出降低热调谐能耗的有希望的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fabrication-Robust Silicon Photonics Platform in Standard 220 nm Silicon Processes

We present a fabrication-robust silicon photonics platform compatible with standard 220 nm silicon thickness. Our generalized design methodology shows a 4× energy reduction over standard filter designs and was validated in a 300 mm foundry process, showing a promising avenue for reducing thermal tuning energy.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 IEEE 17th International Conference on Group IV Photonics (GFP)

自引率

0.00%

发文量