大马士革金属浇口技术，实现无损伤浇口-最后高k工艺集成

2009 3rd International Conference on Signals, Circuits and Systems (SCS) Pub Date : 2009-11-01 DOI:10.1109/ICSCS.2009.5414209

R. Endres, Tillmann A. Krauss, Frank Wessely, U. Schwalke

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引用次数: 1

摘要

在这项工作中，我们提出了用晶体氧化钆(Gd2O3)栅极电介质和金属栅极(氮化钛)制成的MOS电容器和MOS晶体管。本文给出了p-和n-衬底上等效氧化厚度分别为3.0nm和1.5nm的ALD-TiN/Gd2O3/Si栅极堆的初步结果。

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Damascene metal gate technology for damage-free gate-last high-k process integration

In this work, we present MOS capacitors and MOS transistors with a crystalline gadolinium oxide (Gd2O3) gate dielectric and metal gate electrode (titanium nitride) fabricated in a replacement gate process. Initial results on ALD-TiN/Gd2O3/Si gate stacks on p- and n-substrates with equivalent oxide thicknesses (EOT) of 3.0nm and 1.5nm, respectively, are presented in this work.

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2009 3rd International Conference on Signals, Circuits and Systems (SCS)

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