基于反向掺杂浓度的电荷等离子体VVD-SJ VDMOS

2018 Second International Conference on Advances in Electronics, Computers and Communications (ICAECC) Pub Date : 2018-02-01 DOI:10.1109/ICAECC.2018.8479495

Payal Nautiyal, Alok Naugarhiya, Shrish Verma

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引用次数: 1

摘要

本文提出了一种利用铪和铂作为接触金属的新型器件。在源极和漏极下产生电子等离子体，在体上产生空穴等离子体。在N柱中，所提器件的掺杂浓度依次递减，器件表现出较好的性能。对所报道的装置和所提出的装置的仿真结果进行了分析和比较。结果表明，该器件在不降低击穿电压的情况下，提高了漏极电流密度。分析了两种器件在击穿状态下的行为，结果表明，提议器件的行为与报告器件相似。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Charge Plasma Based VVD-SJ VDMOS Employing Reversed Doping Concentration

In this paper, a novel device utilizing hafnium and platinum as contact metals is proposed. Electron plasma is induced under source and drain region and hole plasma is created for body. The doping concentration of the proposed device is in decreasing order for N pillar and it is observed that the device show better properties. Simulation results of the reported and the proposed device has been analyzed and compared. It has been shown that the device offer increased drain current density without any degradation in breakdown voltage. The behavior of both the devices under breakdown regime is analyzed and it is shown that proposed device behave similar to the reported device.

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来源期刊

2018 Second International Conference on Advances in Electronics, Computers and Communications (ICAECC)

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