基于节能CNTFET的双模逻辑(C-DML)设计

Neetika Yadav, N. Pandey, Deva Nand
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引用次数: 0

摘要

为了结合碳纳米管场效应晶体管(CNTFET)晶体管技术和足部双模逻辑(DML)风格的优点,本贡献引入了一种节能的基于CNTFET的双模逻辑风格,称为C-DML。由于晶体管持续缩放,基于MOSFET的DML设计面临参数变化大、通道效应短、高散热和栅极控制减少的问题。为了解决这些问题,本文提出了2输入NAND、NOR和2:1多路复用电路的C-DML设计,并利用HSPICE工具在静态和动态模式下,采用32nm CNTFET Stanford模型在0.9V和5fF负载电容下进行了仿真。功率、延迟和PDP被用来比较现有的CMOS和提议的C-DML电路。该设计在静态模式下提供92.66%的最大PDP降低,在动态模式下提供79.08%的最大PDP降低。研究了温度和电压变化对CMOS和基于CNTFET DML的2:1多路复用器PDP的影响。结果表明,温度对基于C-DML的2:1多路复用器性能的影响可以忽略不计。在不同电压下,静态模式下PDP降低77.89% ~ 83.82%,动态模式下PDP降低82.07% ~ 87.73%。所提出的技术能够在所有电压和温度下降低PDP。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy Efficient CNTFET based Dual Mode Logic (C-DML) Design
To incorporate the benefits of both Carbon Nano Tube Field Effect Transistor (CNTFET) transistor technology and footed Dual Mode Logic (DML) style, this contribution introduces an energy efficient CNTFET based Dual Mode Logic style and is referred to as C-DML. Owing to continuous transistor scaling, MOSFET based DML design suffers large parametric variations, short channel effects, high heat dissipation and decreased gate control. To resolve these issues, the C-DML design is proposed and simulated for 2-input NAND, NOR and 2:1 multiplexer circuit using HSPICE tool with 32nm CNTFET Stanford model at 0.9V and 5fF load capacitance in static and dynamic mode for both footed type A and type B configuration. Power, delay, and PDP are used to compare the existing CMOS and proposed C-DML circuits. The proposed design offers a maximum PDP reduction of 92.66% in static mode and 79.08% in dynamic mode. The effect of temperature and voltage variations on the PDP of both CMOS and proposed CNTFET DML based 2:1 multiplexer is also investigated. It is observed that there is negligible effect of temperature on the performance of proposed C-DML based 2:1 multiplexer. A PDP reduction of 77.89%-83.82% in static mode and 82.07%-87.73% in dynamic mode is observed at different voltages. The proposed technique is capable of reducing PDP at all voltages and temperatures.
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