确定p-n结深度和半导体层轮廓的一些可能性

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088488

L. Hulényi, R. Kinder

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引用次数: 1

摘要

利用电化学电容电压(ECV)技术和四点探针法测定了硼注入硅片的载流子剖面N(x)和p/sup +/-n结的深度。研究发现，p/sup +/-n结深度只有在详细考虑某些限制的情况下才能提供可靠的信息。将ECV计算结果与SUPREM计算结果进行了比较。

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Some possibilities for determining the depth of the p-n junction and profiles of semiconductor layers

Electrochemical capacitance-voltage (ECV) techniques and the four-point probe method have been used to determine the carrier profile N(x) and the depth of the p/sup +/-n junction of a boron implanted silicon wafer. It was found that the p/sup +/-n junction depth can provide reliable information only if certain limitations are considered in detail. The results obtained by ECV were compared with those computed by SUPREM.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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