用于3D-IC相控阵天线模块的RF MEMS开关

Y.A. Wang, A.M. Ferendeci
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引用次数: 1

摘要

本文介绍了一种新型并联电容式射频MEMS开关的建模、设计、制造和测量。开关在x波段单片处理垂直互连3D-IC相控阵天线模块中间层的聚酰亚胺基板上加工。铜开关的下拉电压为12v,寿命周期至少为10/sup / 7/次。该开关在x波段的插入损耗小于0.2 dB,隔离度为11.5 ~ 17.1 dB。测试结果证实,本文提出的MEMS开关的分布式建模改进了移相器中并联配置的RF MEMS开关的设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RF MEMS switches for 3D-IC phased array antenna modules
This paper presents modeling, design, fabrication, and measurement of a novel shunt capacitive RF MEMS switch. The switches are processed on a polyimide substrate in an intermediate layer of a monolithically processed vertically interconnected 3D-IC phased array antenna module at X-band. The copper switches have a pull-down voltage of 12 V and life cycle of at least 10/sup 7/ actuations. The switches demonstrated less than 0.2 dB insertion loss and 11.5 to 17.1 dB isolation at X-band. Measurement results confirmed that the distributed modeling of the MEMS switches presented here improved the design of parallel-configured RF MEMS switches in phase shifters.
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