45纳米CMOS SOI中基于δ -sigma的宽带闭环全数字相位调制器

H. Gheidi, T. Nakatani, V. Leung, P. Asbeck
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引用次数: 3

摘要

本文提出了一种新的射频相位调制器结构,可以显著提高相位分辨率。该调制器在延迟锁环(DLL)配置中使用32个可变延迟元件,以粗5位分辨率提供1-3GHz的宽带操作。5位多路复用器根据基带数字相位数据选择DLL的不同分接,在输出端产生所需的相位调制信号。另外使用高速5位数字δ - σ调制器来补偿5位DLL中发生的相位截断。相位调制器IC采用45nm CMOS SOI实现,在2.3GHz频率下实现8Mb/s GMSK信号的近载波发射抑制55dB,实现< 2%有效值EVM,功耗低于35mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A wideband delta-sigma based closed-loop fully digital phase modulator in 45nm CMOS SOI
This paper presents a new architecture for an RF phase modulator that significantly improves the phase resolution. The modulator utilizes 32 variable delay elements in a delay lock loop (DLL) configuration to provide wideband 1-3GHz operation with coarse 5-bit resolution. A 5-bit multiplexer selects different taps of the DLL according to the baseband digital phase data to generate desired phase modulated signal at the output. A high speed 5-bit digital delta-sigma modulator is additionally used to compensate for the phase truncation occurring in the 5-bit DLL. The phase modulator IC is implemented in 45nm CMOS SOI and achieves <;2% rms EVM while achieving 55dB rejection of close-to-carrier emissions for an 8Mb/s GMSK signal at 2.3GHz, with power consumption below 35mW.
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