0.13 /spl mu/m部分耗尽SOI mosfet的低频噪声和热载流子可靠性

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442) Pub Date : 1900-01-01 DOI:10.1109/ICM.2003.237776

F. Dieudonné, J. Jomaah, F. Balestra

{"title":"0.13 /spl mu/m部分耗尽SOI mosfet的低频噪声和热载流子可靠性","authors":"F. Dieudonné, J. Jomaah, F. Balestra","doi":"10.1109/ICM.2003.237776","DOIUrl":null,"url":null,"abstract":"Partially depleted (PD) SOI devices are now of a major interest in becoming one of the more sought devices for the integration of high-performance low-power radiofrequency applications. Along with this strong interest for PD to jump widely into the application era, some basic but crucial points still need to be thoroughly investigated for the 0.13 /spl mu/m CMOS technology node: the low frequency noise (LFN) and the control of novel excess noise sources as well as the hot-carrier (HC) reliability and new degradation mechanisms.","PeriodicalId":180690,"journal":{"name":"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the low-frequency noise and hot-carrier reliability in 0.13 /spl mu/m Partially depleted SOI MOSFETs\",\"authors\":\"F. Dieudonné, J. Jomaah, F. Balestra\",\"doi\":\"10.1109/ICM.2003.237776\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Partially depleted (PD) SOI devices are now of a major interest in becoming one of the more sought devices for the integration of high-performance low-power radiofrequency applications. Along with this strong interest for PD to jump widely into the application era, some basic but crucial points still need to be thoroughly investigated for the 0.13 /spl mu/m CMOS technology node: the low frequency noise (LFN) and the control of novel excess noise sources as well as the hot-carrier (HC) reliability and new degradation mechanisms.\",\"PeriodicalId\":180690,\"journal\":{\"name\":\"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2003.237776\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2003.237776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

部分耗尽(PD) SOI器件现在成为高性能低功率射频应用集成的更受追捧的器件之一。随着PD广泛进入应用时代的强烈兴趣，对于0.13 /spl mu/m CMOS技术节点，仍然需要深入研究一些基本但至关重要的问题:低频噪声(LFN)和新型过量噪声源的控制，以及热载流子(HC)可靠性和新的退化机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

On the low-frequency noise and hot-carrier reliability in 0.13 /spl mu/m Partially depleted SOI MOSFETs

Partially depleted (PD) SOI devices are now of a major interest in becoming one of the more sought devices for the integration of high-performance low-power radiofrequency applications. Along with this strong interest for PD to jump widely into the application era, some basic but crucial points still need to be thoroughly investigated for the 0.13 /spl mu/m CMOS technology node: the low frequency noise (LFN) and the control of novel excess noise sources as well as the hot-carrier (HC) reliability and new degradation mechanisms.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)

自引率

0.00%

发文量