C. Chan, T. Yue, C. Surya, A. Ng, A. Djurišić, F. Scholz, C. Liu, M. Li
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Enhancement of Extraction Efficiency in Laser-debonded GaN Light Emitting Diodes
We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photo-electrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.
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