Blocking EMI Optimization of the Drive Circuit for an Intelligent High Side Power Switch

Despite the advantages of a fast switching speed and a low power consumption, intelligent switch chips as a controlled power supply chip need to be electromagnetic compatible due to the complex working environment. Either injection of electromagnetic interference or the transistor's own parasitic capacitance due to the change to the transistor state can result in chip failure. This paper will introduce a novel optimization strategy of reducing (Electromagnetic interference) EMI for an intelligent high side power switch. The proposed circuit is characterized by a differential voltage comparator for a better tolerance of interference and it also exploits the single-term conductivity of the diode to block noise. Experimental results show that the improved method can suppress the electromagnetic interference effectively and improve the anti-jamming ability without increasing the chip die area. It has a wide application potential in improving the reliability of chips.