基于4位进位前置加法器的单电子阈值逻辑稳定性分析

Arpita Ghosh, A. Jain, N. Singh, S. Sarkar
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引用次数: 9

摘要

本文论述了基于单电子隧穿的阈值逻辑进位前置加法器的详细设计。隧穿是一种机制,其中一个单一的电子可以穿过一个夹层结构的绝缘层之间的两个导电材料称为隧道结。阈值逻辑主要是基于阈值和加权和之间的比较。本文采用单电子隧穿技术设计阈值逻辑门。该电路在SIMON环境下进行了仿真。仿真的输入输出波形证实了所设计电路的正常工作。我们设计的主要关注点之一是电路稳定性方面。文中对电路的稳定性图进行了仿真,并对仿真结果进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stability aspects of single electron threshold logic based 4 bit carry look ahead adder
This paper demonstrates the detailed design of carry look ahead adder with the single electron tunneling based threshold logic. Tunneling is a mechanism in which a single electron can cross a sandwiched structure of insulating layer between two conducting materials known as tunnel junction. The threshold logic works mainly on the basis of the comparison in between the threshold and the weighted sum. Here single electron tunneling technology is used for designing threshold logic gates. The proposed circuit is simulated in SIMON environment. The simulated input and output waveforms confirm the proper functioning of the designed circuit. One of the main concerns of our design is the circuit stability aspect. The stability plots of the proposed circuit are simulated and the results are also discussed in the paper.
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