用于GSM基站接收器的硅芯片

5th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service. TELSIKS 2001. Proceedings of Papers (Cat. No.01EX517) Pub Date : 2001-09-19 DOI:10.1109/TELSKS.2001.955802

O. Boric-Lubecke, Jenshan Lin, P. Gould

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引用次数: 1

摘要

本文介绍了为GSM900/DCS1800基站接收机设计的硅射频集成电路。回顾了GSM标准和无线电要求，并讨论了满足这些要求的电路。提出了一个低相位噪声压控振荡器、一个高线性度低噪声放大器、一个高线性度混频器和一个低残留相位噪声缓冲放大器，所有这些都完全集成在0.25 /spl mu/m BiCMOS技术中。这些电路的性能证明了将低成本硅技术用于基站接收无线电是可行的。

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Silicon chips for GSM base station receivers

This paper describes silicon RFICs designed for GSM900/DCS1800 base station receivers. GSM standard and radio requirements are reviewed, and circuits that meet those requirements are discussed. A low-phase noise VCO, a high linearity low noise amplifier, a high linearity mixer, and a low-residual phase noise buffer amplifier, all fully integrated in 0.25 /spl mu/m BiCMOS technology, are presented. Performance of these circuits demonstrated that it is feasible to use low cost silicon technology for base station receiver radios.

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来源期刊

5th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service. TELSIKS 2001. Proceedings of Papers (Cat. No.01EX517)

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