30- 60ghz频段低噪声MODFET的设计与制造

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961496

A. M. Zubkov, A. S. Korablin, Y. Matveyev, A. Cherniavskiy, A. A. Dorofeyev

{"title":"30- 60ghz频段低噪声MODFET的设计与制造","authors":"A. M. Zubkov, A. S. Korablin, Y. Matveyev, A. Cherniavskiy, A. A. Dorofeyev","doi":"10.1109/CRMICO.2001.961496","DOIUrl":null,"url":null,"abstract":"Described in this paper are unified design and electronic lithography-based technology of production of low-noise Schottky FETs. HEMT and PHEMT series for 3-60 GHz frequency band have been manufactured.","PeriodicalId":197471,"journal":{"name":"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and fabrication of low noise MODFET for 30-60 GHz band\",\"authors\":\"A. M. Zubkov, A. S. Korablin, Y. Matveyev, A. Cherniavskiy, A. A. Dorofeyev\",\"doi\":\"10.1109/CRMICO.2001.961496\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Described in this paper are unified design and electronic lithography-based technology of production of low-noise Schottky FETs. HEMT and PHEMT series for 3-60 GHz frequency band have been manufactured.\",\"PeriodicalId\":197471,\"journal\":{\"name\":\"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2001.961496\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2001.961496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了低噪声肖特基场效应管的统一设计和基于电子光刻的生产技术。已生产3- 60ghz频段的HEMT和PHEMT系列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design and fabrication of low noise MODFET for 30-60 GHz band

Described in this paper are unified design and electronic lithography-based technology of production of low-noise Schottky FETs. HEMT and PHEMT series for 3-60 GHz frequency band have been manufactured.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

自引率

0.00%

发文量