C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh
{"title":"射频MEMS:不断发展的射频开关技术的优势与挑战","authors":"C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh","doi":"10.1109/GAAS.2001.964365","DOIUrl":null,"url":null,"abstract":"RF MEMS technology is a new technology that is already finding niche applications in radar and communications systems. Its low power, high performance, and tunability enables potential cost, size, and/or weight improvements in several systems. Emphasis is no longer focused on RF performance, as that aspect is well established. Currently, efforts are underway to establish and improve the reliability of the devices. As with any maturing technology, there is much room for improvement. However, results to date show continuing improvement in lifetime and provide an argument that these devices will eventually have very long lifetimes (> 10/sup 11/ cycles).","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"RF MEMS: benefits & challenges of an evolving RF switch technology\",\"authors\":\"C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh\",\"doi\":\"10.1109/GAAS.2001.964365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RF MEMS technology is a new technology that is already finding niche applications in radar and communications systems. Its low power, high performance, and tunability enables potential cost, size, and/or weight improvements in several systems. Emphasis is no longer focused on RF performance, as that aspect is well established. Currently, efforts are underway to establish and improve the reliability of the devices. As with any maturing technology, there is much room for improvement. However, results to date show continuing improvement in lifetime and provide an argument that these devices will eventually have very long lifetimes (> 10/sup 11/ cycles).\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF MEMS: benefits & challenges of an evolving RF switch technology
RF MEMS technology is a new technology that is already finding niche applications in radar and communications systems. Its low power, high performance, and tunability enables potential cost, size, and/or weight improvements in several systems. Emphasis is no longer focused on RF performance, as that aspect is well established. Currently, efforts are underway to establish and improve the reliability of the devices. As with any maturing technology, there is much room for improvement. However, results to date show continuing improvement in lifetime and provide an argument that these devices will eventually have very long lifetimes (> 10/sup 11/ cycles).