{"title":"考虑扭结效应的多晶硅薄膜晶体管导通特性建模","authors":"Bin Li, Ting Chen, Xueren Zheng","doi":"10.1109/ICSICT.2008.4734527","DOIUrl":null,"url":null,"abstract":"A semi-empirical analytical model of the turn-on characteristics of poly-silicon thin-film transistor (TFT) with considering kink effect is presented based on the physical characteristics of poly-silicon thin film. With reference to the approach of modeling the kink effect in SOI devices and considering the grain boundaries in poly-silicon thin film, the dc characteristics of poly-silicon TFT are simulated, including drain induced grain boundary lowering (DIGBL) effect, impact ionization, floating body effect, parasitic bipolar transistor (PBT) effect, etc. The simulation results show a good agreement with the experimental data.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling of the turn-on characteristics of poly-silicon thin-film transistors with considering kink effect\",\"authors\":\"Bin Li, Ting Chen, Xueren Zheng\",\"doi\":\"10.1109/ICSICT.2008.4734527\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A semi-empirical analytical model of the turn-on characteristics of poly-silicon thin-film transistor (TFT) with considering kink effect is presented based on the physical characteristics of poly-silicon thin film. With reference to the approach of modeling the kink effect in SOI devices and considering the grain boundaries in poly-silicon thin film, the dc characteristics of poly-silicon TFT are simulated, including drain induced grain boundary lowering (DIGBL) effect, impact ionization, floating body effect, parasitic bipolar transistor (PBT) effect, etc. The simulation results show a good agreement with the experimental data.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734527\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of the turn-on characteristics of poly-silicon thin-film transistors with considering kink effect
A semi-empirical analytical model of the turn-on characteristics of poly-silicon thin-film transistor (TFT) with considering kink effect is presented based on the physical characteristics of poly-silicon thin film. With reference to the approach of modeling the kink effect in SOI devices and considering the grain boundaries in poly-silicon thin film, the dc characteristics of poly-silicon TFT are simulated, including drain induced grain boundary lowering (DIGBL) effect, impact ionization, floating body effect, parasitic bipolar transistor (PBT) effect, etc. The simulation results show a good agreement with the experimental data.
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