单光子和双光子吸收单微带光电探测器

Guanlin Lou, Hai Zhu, Anqi Chen, Yanyan Wu, Zhiyang Chen, Yuhao Ren, Yunfeng Liang, Jinyu Li, Xuchun Gui, D. Zhong, Z. Qiu, Zikang Tang
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引用次数: 0

摘要

对具有金属-半导体-金属(MSM)结构的单微带光电探测器进行了全面的论证和表征。对于单光子吸收,ZnO-MB光电探测器在20v偏压下的最大响应率可高达1.4×105 A/W。mb探测器的光响应结果揭示了两种弛豫机制对载流子衰减时间的影响。此外,还实现了单mb探测器的双光子吸收上转换光响应性,这是目前所知的关于双光子吸收探测器的首次报道。MB器件优异的双光子吸收光响应特性不仅可用于探测器,还可用于太阳能电池和生物医学成像。上述结果为未来制造基于单微纳米结构的多光子激发光电器件迈出了重要的一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single and Two-Photon Absorption Single-Microbelt Photodetector
Single microbelt (MB] photodetectors with metal-semiconductor-metal (MSM] structure have been demonstrated and characterized comprehensively. For single-photon absorption, the maximum responsivity of ZnO-MB photodetector can reach as high as 1.4×105 A/W at 20 V bias. The results about photoresponse of MB-detector reveals that two relaxation mechanisms contribute to the carrier decay time. Moreover, the two-photon absorption upconversion photoresponsivity in the single-MB detector has also been realized, which is first report about the two-photon absorption detector to the best of our knowledge. The excellent two-photon absorption photoresponsivity characteristic of MB device can be available not only for detector but also for solar cell and biomedical imaging. Above results present a significant step towards future fabrication of single micro/nano-structure based multiphoton excitation optoelectronic device.
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