AlInAs/GaInAs超晶格负差分电阻晶体管(SNDRT)的研究

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791633

W. Liu, S. Cheng, H. Pan, S. Feng, K. Yu, J. Yan

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引用次数: 1

摘要

成功制备了一种新型AlInAs/GaInAs超晶格负差分电阻开关(SNDRT)。采用5周期AlInAs/GaInAs超晶格服务于谐振隧道路线和少数载流子的约束势垒。实验结果表明，在所研究的SNDRT器件在室温下，在饱和和正向有源模式下，分别获得了一个有趣的三端控制n形多重负微分电阻(MNDR)现象和晶体管作用。认为n形MNDR主要是由5周期AlInAs/GaInAs超晶格内的共振隧穿引起的。

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On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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