{"title":"AlInAs/GaInAs超晶格负差分电阻晶体管(SNDRT)的研究","authors":"W. Liu, S. Cheng, H. Pan, S. Feng, K. Yu, J. Yan","doi":"10.1109/COMMAD.1998.791633","DOIUrl":null,"url":null,"abstract":"A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)\",\"authors\":\"W. Liu, S. Cheng, H. Pan, S. Feng, K. Yu, J. Yan\",\"doi\":\"10.1109/COMMAD.1998.791633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)
A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.