Ran Li, Hui Huang, X. Ren, Jing-Wei Guo, Xiaolong Liu, Yongqing Huang, Shiwei Cai
{"title":"金属有机化学气相沉积法优化p型砷化镓纳米线生长","authors":"Ran Li, Hui Huang, X. Ren, Jing-Wei Guo, Xiaolong Liu, Yongqing Huang, Shiwei Cai","doi":"10.1109/AOM.2010.5713532","DOIUrl":null,"url":null,"abstract":"Vertical p-type Gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In high II/III ratio range (II/II>9.1%), there exists a critical length, beyond which the kinking takes place. Two possible reasons were discussed.Zn occurrence into the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III=0.2%, the doping concentration is about 8×1018.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization growth of P-type GaAs nanowires by metal-organic chemical vapor deposition\",\"authors\":\"Ran Li, Hui Huang, X. Ren, Jing-Wei Guo, Xiaolong Liu, Yongqing Huang, Shiwei Cai\",\"doi\":\"10.1109/AOM.2010.5713532\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertical p-type Gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In high II/III ratio range (II/II>9.1%), there exists a critical length, beyond which the kinking takes place. Two possible reasons were discussed.Zn occurrence into the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III=0.2%, the doping concentration is about 8×1018.\",\"PeriodicalId\":222199,\"journal\":{\"name\":\"Advances in Optoelectronics and Micro/nano-optics\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Optoelectronics and Micro/nano-optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AOM.2010.5713532\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Optoelectronics and Micro/nano-optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AOM.2010.5713532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization growth of P-type GaAs nanowires by metal-organic chemical vapor deposition
Vertical p-type Gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In high II/III ratio range (II/II>9.1%), there exists a critical length, beyond which the kinking takes place. Two possible reasons were discussed.Zn occurrence into the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III=0.2%, the doping concentration is about 8×1018.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
