4H-SiC的1.1 eV深能级

W. Mitchel, R. Perrin, J. Goldstein, M. Roth, S.R. Smith, J. Solomon, A. Evwaraye, H. Hobgood, G. Augustine, V. Balakrishna
{"title":"4H-SiC的1.1 eV深能级","authors":"W. Mitchel, R. Perrin, J. Goldstein, M. Roth, S.R. Smith, J. Solomon, A. Evwaraye, H. Hobgood, G. Augustine, V. Balakrishna","doi":"10.1109/SIM.1998.785126","DOIUrl":null,"url":null,"abstract":"Temperature dependent Hall effect and optical absorption measurements of vanadium doped semi-insulating 4H-SiC samples are reported along with optical admittance spectroscopy measurements of related material. In addition to the deep donor and acceptor levels of substitutional vanadium, E/sub C/-1.6 eV and E/sub C/-0.7 eV respectively, we report an additional level at 1.1 eV. This level has been seen in undoped 4H-SiC by optical admittance spectroscopy which has also detected a similar level at E/sub C/-1.0 eV in 6H-SiC, and by temperature dependent Hall effect in vanadium doped material. Optical absorption measurements of the vanadium intra-center absorption show that this level is not either of the two substitutional vanadium levels. SIMS measurements support the hypothesis that the 1.1 eV level is a complex of vanadium and another impurity, possibly titanium.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The 1.1 eV deep level in 4H-SiC\",\"authors\":\"W. Mitchel, R. Perrin, J. Goldstein, M. Roth, S.R. Smith, J. Solomon, A. Evwaraye, H. Hobgood, G. Augustine, V. Balakrishna\",\"doi\":\"10.1109/SIM.1998.785126\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Temperature dependent Hall effect and optical absorption measurements of vanadium doped semi-insulating 4H-SiC samples are reported along with optical admittance spectroscopy measurements of related material. In addition to the deep donor and acceptor levels of substitutional vanadium, E/sub C/-1.6 eV and E/sub C/-0.7 eV respectively, we report an additional level at 1.1 eV. This level has been seen in undoped 4H-SiC by optical admittance spectroscopy which has also detected a similar level at E/sub C/-1.0 eV in 6H-SiC, and by temperature dependent Hall effect in vanadium doped material. Optical absorption measurements of the vanadium intra-center absorption show that this level is not either of the two substitutional vanadium levels. SIMS measurements support the hypothesis that the 1.1 eV level is a complex of vanadium and another impurity, possibly titanium.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785126\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文报道了掺钒半绝缘4H-SiC样品的温度相关霍尔效应和光吸收测量以及相关材料的光导纳光谱测量。除了取代钒的深层供体和受体水平,分别为E/sub C/-1.6 eV和E/sub C/-0.7 eV,我们还报道了一个额外的1.1 eV水平。在未掺杂的4H-SiC中,通过光学导纳光谱也发现了类似的水平,在E/sub C/-1.0 eV的6H-SiC中,通过掺钒材料的温度依赖霍尔效应也发现了类似的水平。对钒中心内吸收的光学吸收测量表明,该水平不是两个取代的钒水平中的任何一个。SIMS的测量结果支持了1.1 eV水平是钒和另一种杂质(可能是钛)的复合物的假设。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The 1.1 eV deep level in 4H-SiC
Temperature dependent Hall effect and optical absorption measurements of vanadium doped semi-insulating 4H-SiC samples are reported along with optical admittance spectroscopy measurements of related material. In addition to the deep donor and acceptor levels of substitutional vanadium, E/sub C/-1.6 eV and E/sub C/-0.7 eV respectively, we report an additional level at 1.1 eV. This level has been seen in undoped 4H-SiC by optical admittance spectroscopy which has also detected a similar level at E/sub C/-1.0 eV in 6H-SiC, and by temperature dependent Hall effect in vanadium doped material. Optical absorption measurements of the vanadium intra-center absorption show that this level is not either of the two substitutional vanadium levels. SIMS measurements support the hypothesis that the 1.1 eV level is a complex of vanadium and another impurity, possibly titanium.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信