W. Mitchel, R. Perrin, J. Goldstein, M. Roth, S.R. Smith, J. Solomon, A. Evwaraye, H. Hobgood, G. Augustine, V. Balakrishna
{"title":"4H-SiC的1.1 eV深能级","authors":"W. Mitchel, R. Perrin, J. Goldstein, M. Roth, S.R. Smith, J. Solomon, A. Evwaraye, H. Hobgood, G. Augustine, V. Balakrishna","doi":"10.1109/SIM.1998.785126","DOIUrl":null,"url":null,"abstract":"Temperature dependent Hall effect and optical absorption measurements of vanadium doped semi-insulating 4H-SiC samples are reported along with optical admittance spectroscopy measurements of related material. In addition to the deep donor and acceptor levels of substitutional vanadium, E/sub C/-1.6 eV and E/sub C/-0.7 eV respectively, we report an additional level at 1.1 eV. This level has been seen in undoped 4H-SiC by optical admittance spectroscopy which has also detected a similar level at E/sub C/-1.0 eV in 6H-SiC, and by temperature dependent Hall effect in vanadium doped material. Optical absorption measurements of the vanadium intra-center absorption show that this level is not either of the two substitutional vanadium levels. SIMS measurements support the hypothesis that the 1.1 eV level is a complex of vanadium and another impurity, possibly titanium.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The 1.1 eV deep level in 4H-SiC\",\"authors\":\"W. Mitchel, R. Perrin, J. Goldstein, M. Roth, S.R. Smith, J. Solomon, A. Evwaraye, H. Hobgood, G. Augustine, V. Balakrishna\",\"doi\":\"10.1109/SIM.1998.785126\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Temperature dependent Hall effect and optical absorption measurements of vanadium doped semi-insulating 4H-SiC samples are reported along with optical admittance spectroscopy measurements of related material. In addition to the deep donor and acceptor levels of substitutional vanadium, E/sub C/-1.6 eV and E/sub C/-0.7 eV respectively, we report an additional level at 1.1 eV. This level has been seen in undoped 4H-SiC by optical admittance spectroscopy which has also detected a similar level at E/sub C/-1.0 eV in 6H-SiC, and by temperature dependent Hall effect in vanadium doped material. Optical absorption measurements of the vanadium intra-center absorption show that this level is not either of the two substitutional vanadium levels. SIMS measurements support the hypothesis that the 1.1 eV level is a complex of vanadium and another impurity, possibly titanium.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785126\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature dependent Hall effect and optical absorption measurements of vanadium doped semi-insulating 4H-SiC samples are reported along with optical admittance spectroscopy measurements of related material. In addition to the deep donor and acceptor levels of substitutional vanadium, E/sub C/-1.6 eV and E/sub C/-0.7 eV respectively, we report an additional level at 1.1 eV. This level has been seen in undoped 4H-SiC by optical admittance spectroscopy which has also detected a similar level at E/sub C/-1.0 eV in 6H-SiC, and by temperature dependent Hall effect in vanadium doped material. Optical absorption measurements of the vanadium intra-center absorption show that this level is not either of the two substitutional vanadium levels. SIMS measurements support the hypothesis that the 1.1 eV level is a complex of vanadium and another impurity, possibly titanium.