4H-SiC的1.1 eV深能级

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-05 DOI:10.1109/SIM.1998.785126

W. Mitchel, R. Perrin, J. Goldstein, M. Roth, S.R. Smith, J. Solomon, A. Evwaraye, H. Hobgood, G. Augustine, V. Balakrishna

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引用次数: 2

摘要

本文报道了掺钒半绝缘4H-SiC样品的温度相关霍尔效应和光吸收测量以及相关材料的光导纳光谱测量。除了取代钒的深层供体和受体水平，分别为E/sub C/-1.6 eV和E/sub C/-0.7 eV，我们还报道了一个额外的1.1 eV水平。在未掺杂的4H-SiC中，通过光学导纳光谱也发现了类似的水平，在E/sub C/-1.0 eV的6H-SiC中，通过掺钒材料的温度依赖霍尔效应也发现了类似的水平。对钒中心内吸收的光学吸收测量表明，该水平不是两个取代的钒水平中的任何一个。SIMS的测量结果支持了1.1 eV水平是钒和另一种杂质(可能是钛)的复合物的假设。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The 1.1 eV deep level in 4H-SiC

Temperature dependent Hall effect and optical absorption measurements of vanadium doped semi-insulating 4H-SiC samples are reported along with optical admittance spectroscopy measurements of related material. In addition to the deep donor and acceptor levels of substitutional vanadium, E/sub C/-1.6 eV and E/sub C/-0.7 eV respectively, we report an additional level at 1.1 eV. This level has been seen in undoped 4H-SiC by optical admittance spectroscopy which has also detected a similar level at E/sub C/-1.0 eV in 6H-SiC, and by temperature dependent Hall effect in vanadium doped material. Optical absorption measurements of the vanadium intra-center absorption show that this level is not either of the two substitutional vanadium levels. SIMS measurements support the hypothesis that the 1.1 eV level is a complex of vanadium and another impurity, possibly titanium.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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