压电半导体薄膜中的SH波

Jianjun Liu, Xiaoshan Cao
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引用次数: 0

摘要

研究了SH波在横向各向同性单载流子压电半导体薄膜中的传播行为。基于本构方程、机械位移与应变分量的关系、电场与电势的关系、运动方程、高斯静电定律和电荷守恒,建立了SH波关于位移、电势和载流子密度扰动的控制方程。非电极压电半导体的边界条件包括无牵引力条件、电连续性条件和载流子密度摄动的表面消失条件。得到了在机电边界条件下SH波的解析色散方程。数值结果表明,半导体特性会影响相速度和波衰减现象。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SH waves in piezoelectric semiconductor film
The propagation behavior of SH waves in a transversely isotropic one-carrier piezoelectric semiconductor thin film is investigated. We establish the governing equations of SH waves with respect to the displacement, electrical potential, and perturbation of carrier density based on constitutive equations, the relationship between mechanical displacement and strain components, the relationship between electric field and electric potential, equations of motion, Gauss's law of electrostatics, and conservation of charge. The boundary conditions in an unelectroded piezoelectric semiconductor include the traction-free condition, electric continuity condition, and perturbation of the carrier density of the surface vanishing condition. An analytical dispersion equation of SH waves for the case of mechanical and electrical boundary conditions is obtained. Numerical results show that the semiconductor character can affect the phase velocity and wave attenuation phenomenon.
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