为什么室温GeSn激光器需要碳

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141895

Tuhin Dey, Augustus W. Arbogast, Q. Meng, Shamim Reza, A. Muhowski, Joshua Cooper, R. Goldman, T. Borrely, S. Bank, M. Wistey

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引用次数: 0

摘要

器件模型表明，GeSn激光器受到弱电子和光子约束的限制。添加碳可以提供强大的传导带偏移，释放SiGeSn层以形成单独的约束异质结构，降低阈值。本文将介绍近年来生长的GeC和gesc量子阱的光致发光。

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Why Room Temperature GeSn Lasers Need Carbon

Device models show GeSn lasers are limited by weak electron and photon confinement. Adding carbon offers strong conduction band offsets, freeing SiGeSn layers for separate confinement heterostructures, reducing thresholds. Photoluminescence from recent growths of GeC and GeSnC quantum wells will be presented.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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