{"title":"一种新的电流模式可编程细胞神经网络","authors":"L. Ravezzi, G. Dalla Betta, G. Setti","doi":"10.1109/CNNA.1998.685380","DOIUrl":null,"url":null,"abstract":"We report on the design of a full-analog current-mode CNN in a 1.2 /spl mu/m CMOS technology, whose cell core is characterized by an intrinsic capability of weights control, low power consumption and small area occupation. Circuit simulations allowed the design approach to be validated and the electrical performance of the CNN to be predicted; moreover, it is shown that the proposed CNN can be successfully adopted for several applications in image processing. A preliminary CNN test-chip consisting of a 8/spl times/1 array for connected component detection and shadow detection, is currently being fabricated at IRST (Trento Italy) in a 2.5 /spl mu/m CMOS technology.","PeriodicalId":171485,"journal":{"name":"1998 Fifth IEEE International Workshop on Cellular Neural Networks and their Applications. Proceedings (Cat. No.98TH8359)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A new current mode programmable cellular neural network\",\"authors\":\"L. Ravezzi, G. Dalla Betta, G. Setti\",\"doi\":\"10.1109/CNNA.1998.685380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the design of a full-analog current-mode CNN in a 1.2 /spl mu/m CMOS technology, whose cell core is characterized by an intrinsic capability of weights control, low power consumption and small area occupation. Circuit simulations allowed the design approach to be validated and the electrical performance of the CNN to be predicted; moreover, it is shown that the proposed CNN can be successfully adopted for several applications in image processing. A preliminary CNN test-chip consisting of a 8/spl times/1 array for connected component detection and shadow detection, is currently being fabricated at IRST (Trento Italy) in a 2.5 /spl mu/m CMOS technology.\",\"PeriodicalId\":171485,\"journal\":{\"name\":\"1998 Fifth IEEE International Workshop on Cellular Neural Networks and their Applications. Proceedings (Cat. No.98TH8359)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Fifth IEEE International Workshop on Cellular Neural Networks and their Applications. Proceedings (Cat. No.98TH8359)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CNNA.1998.685380\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Fifth IEEE International Workshop on Cellular Neural Networks and their Applications. Proceedings (Cat. No.98TH8359)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CNNA.1998.685380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new current mode programmable cellular neural network
We report on the design of a full-analog current-mode CNN in a 1.2 /spl mu/m CMOS technology, whose cell core is characterized by an intrinsic capability of weights control, low power consumption and small area occupation. Circuit simulations allowed the design approach to be validated and the electrical performance of the CNN to be predicted; moreover, it is shown that the proposed CNN can be successfully adopted for several applications in image processing. A preliminary CNN test-chip consisting of a 8/spl times/1 array for connected component detection and shadow detection, is currently being fabricated at IRST (Trento Italy) in a 2.5 /spl mu/m CMOS technology.