用于一次性可编程存储器的高密度大比熔丝氧化物器件

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9962988

Xuecheng Cui, Dong Liu, Jifang Cao, Xiao Yu, Bing Chen

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引用次数: 0

摘要

本文观察了Pt/HfO2/NiOx/Ni这一简单金属-氧化物-金属器件的氧化熔和反熔行为。抗熔断状态和熔断状态可以通过分别在具有或不具有电流顺应性的器件上施加程序电压来实现。并且两种状态的阻力窗口达到109左右，可以有效降低编程错误的可能性。它还具有良好的保留特性和易于集成的简单结构。它可以很好地应用于一次性可编程存储器的高可靠性领域。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A High-Density Large-Ratio Fuse Based Oxide Devices for One-time-programmable Memory Applications

In this paper, the oxide fused and anti-fused behavior has been observed in a simple metal-oxide-metal device: Pt/HfO2/NiOx/Ni. The anti-fused state and fused state can be achieved by applying program voltage on the devices with or without current compliance, respectively. And the resistance window of the two states reaches about 109, which can effectively reduce the possibility of incorrect programming. It also showed excellent retention characteristics and a simple structure friendly for integration. It can be well used in the field of high reliability of one-time programmable memory.

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2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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