MTO晶闸管是一种新型大功率双极MOS晶闸管

IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting Pub Date : 1996-10-06 DOI:10.1109/IAS.1996.559262

D. Piccone, R. D. De Doncker, J. Barrow, W. H. Tobin

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引用次数: 35

摘要

一种新型高功率双极MOS晶闸管，MTO/sup TM/晶闸管，是一种锁存器件，它将MCT和IGBT的有限能力扩展到更高的功率和阻断电压。MTO晶闸管计划非常适合，从阻塞电压水平开始，其他双极MOS器件被认为具有收益递减的上限，即高于3000 V。MTO晶闸管很容易适应传统的圆盘式封装，用于双面冷却，并允许设计电压机会达到晶闸管，例如，9000 V。概念的可行性已经确立，具体设计的开发正在顺利进行。

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The MTO thyristor-a new high power bipolar MOS thyristor

A new high power bipolar MOS thyristor, the MTO/sup TM/ thyristor, is a latching device which extends the limited capabilities of the MCT and IGBT to higher power and blocking voltage. The MTO thyristor plan fits well, beginning at a blocking voltage level where the other bipolar MOS devices are believed to have a ceiling of diminishing returns, that is above 3000 V. The MTO thyristor is easily accommodated to the conventional disk-type package for double sided cooling and permits design voltage opportunity to that achieved for thyristors, e.g., 9000 V. Feasibility of concept has been established and development for specific designs is well underway.

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IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting

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