一种0.13µm CMOS耐辐射环形振荡器锁相环

Lei Chen, X. Wen, Y. You, D. Huang, Changzhi Li, Jinghong Chen
{"title":"一种0.13µm CMOS耐辐射环形振荡器锁相环","authors":"Lei Chen, X. Wen, Y. You, D. Huang, Changzhi Li, Jinghong Chen","doi":"10.1109/MWSCAS.2012.6291945","DOIUrl":null,"url":null,"abstract":"Advanced CMOS technologies have demonstrated reduced sensitivity to radiation total-ionization-dose (TID) effect. However, the reduced device dimensions can significantly increase the circuit sensitivity to transient radiation effects. This paper presents a radiation-tolerant ring oscillator Phase-Locked Loop (PLL) designed in a commercial 0.13 μm CMOS process. The PLL is designed for radiation-tolerant high-speed serial link applications. It operates over a frequency range of 1.1 GHz to 4.4 GHz with an RMS jitter of 1.8 ps at 3.125 GHz. The phase frequency detector (PFD) and frequency divider (FD) are designed with a novel D-flip-flop (DFF) that is robust to single event radiation effects (SEEs). The voltage-controlled oscillator (VCO) is designed with two ring oscillators cross-coupled thus compensating each other with the radiation-induced transient currents. Each ring oscillator has its own control voltage driven by an independent charge pump and loop filter. The redundancy helps to mitigate radiation strikes on the VCO control voltage. Simulation results show that the proposed PLL demonstrates radiation immunity for critical charge values up to 250 fC and can recover quickly from radiation strikes on its sensitive nodes. The PLL operates under a 1.2 V power supply and consumes 40 mW of power.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A radiation-tolerant ring oscillator phase-locked loop in 0.13µm CMOS\",\"authors\":\"Lei Chen, X. Wen, Y. You, D. Huang, Changzhi Li, Jinghong Chen\",\"doi\":\"10.1109/MWSCAS.2012.6291945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advanced CMOS technologies have demonstrated reduced sensitivity to radiation total-ionization-dose (TID) effect. However, the reduced device dimensions can significantly increase the circuit sensitivity to transient radiation effects. This paper presents a radiation-tolerant ring oscillator Phase-Locked Loop (PLL) designed in a commercial 0.13 μm CMOS process. The PLL is designed for radiation-tolerant high-speed serial link applications. It operates over a frequency range of 1.1 GHz to 4.4 GHz with an RMS jitter of 1.8 ps at 3.125 GHz. The phase frequency detector (PFD) and frequency divider (FD) are designed with a novel D-flip-flop (DFF) that is robust to single event radiation effects (SEEs). The voltage-controlled oscillator (VCO) is designed with two ring oscillators cross-coupled thus compensating each other with the radiation-induced transient currents. Each ring oscillator has its own control voltage driven by an independent charge pump and loop filter. The redundancy helps to mitigate radiation strikes on the VCO control voltage. Simulation results show that the proposed PLL demonstrates radiation immunity for critical charge values up to 250 fC and can recover quickly from radiation strikes on its sensitive nodes. The PLL operates under a 1.2 V power supply and consumes 40 mW of power.\",\"PeriodicalId\":324891,\"journal\":{\"name\":\"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2012.6291945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2012.6291945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

先进的CMOS技术已经证明降低了对辐射总电离剂量(TID)效应的敏感性。然而,减小的器件尺寸可以显著提高电路对瞬态辐射效应的灵敏度。提出了一种基于商用0.13 μm CMOS工艺设计的耐辐射环形振荡器锁相环(PLL)。锁相环是为耐辐射高速串行链路应用而设计的。它在1.1 GHz到4.4 GHz的频率范围内工作,在3.125 GHz时的RMS抖动为1.8 ps。相位频率检测器(PFD)和分频器(FD)设计了一种新型的d触发器(DFF),该触发器对单事件辐射效应(SEEs)具有鲁棒性。电压控制振荡器(VCO)是由两个环形振荡器交叉耦合设计的,从而与辐射诱导的瞬态电流相互补偿。每个环形振荡器都有自己的控制电压,由一个独立的电荷泵和环路滤波器驱动。冗余有助于减轻对VCO控制电压的辐射打击。仿真结果表明,该锁相环对250 fC的临界电荷值具有良好的抗辐射能力,敏感节点受到辐射冲击后能够快速恢复。锁相环在1.2 V电源下工作,功耗为40 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A radiation-tolerant ring oscillator phase-locked loop in 0.13µm CMOS
Advanced CMOS technologies have demonstrated reduced sensitivity to radiation total-ionization-dose (TID) effect. However, the reduced device dimensions can significantly increase the circuit sensitivity to transient radiation effects. This paper presents a radiation-tolerant ring oscillator Phase-Locked Loop (PLL) designed in a commercial 0.13 μm CMOS process. The PLL is designed for radiation-tolerant high-speed serial link applications. It operates over a frequency range of 1.1 GHz to 4.4 GHz with an RMS jitter of 1.8 ps at 3.125 GHz. The phase frequency detector (PFD) and frequency divider (FD) are designed with a novel D-flip-flop (DFF) that is robust to single event radiation effects (SEEs). The voltage-controlled oscillator (VCO) is designed with two ring oscillators cross-coupled thus compensating each other with the radiation-induced transient currents. Each ring oscillator has its own control voltage driven by an independent charge pump and loop filter. The redundancy helps to mitigate radiation strikes on the VCO control voltage. Simulation results show that the proposed PLL demonstrates radiation immunity for critical charge values up to 250 fC and can recover quickly from radiation strikes on its sensitive nodes. The PLL operates under a 1.2 V power supply and consumes 40 mW of power.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信