用于94 GHz混频器的点肖特基二极管和MHEMT二极管的比较

2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI:10.1109/GSMM.2008.4534555

S. Bang, Sang Jin Lee, Mun-Kyo Lee, D. Ko, S. Moon, Yong-Hyun Baek, Min Han, S. Choi, T. Baek, Byoung-Chul Jun, Dong-Chul Park, Sam-Dong Kim, J. Rhee

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摘要

本文设计了一种点型GaAs肖特基二极管，以改善其射频特性。点型GaAs肖特基二极管的总电阻为18.3 ω，室温下的理想因数为1.41，截止频率为435 GHz。仿真结果表明，所设计的单平衡混频器结构具有良好的转换损耗，为6.28 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of Dot Schottky and MHEMT Diodes for 94 GHz Mixer Applications

In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Omega, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.

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2008 Global Symposium on Millimeter Waves

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