Longzhi Yang, T. Hu, A. Shen, C. Pei, Bing-Xian Yang, T. Dai, Hui Yu, Yubo Li, Xiaoqing Jiang, Jianyi Yang
{"title":"基于epsilon -近零超材料的超紧凑调制器","authors":"Longzhi Yang, T. Hu, A. Shen, C. Pei, Bing-Xian Yang, T. Dai, Hui Yu, Yubo Li, Xiaoqing Jiang, Jianyi Yang","doi":"10.1109/NUSOD.2014.6935349","DOIUrl":null,"url":null,"abstract":"We present an ultra-compact modulator with a length of 15 nm by utilizing the squeezing and tunneling ability of the Epsilon-Near-Zero metamaterial. The finite-different time-domain simulations show the insertion loss is roughly -0.27 dB while the 3-dB extinction ratio is obtained with a 0.8 V gate voltage. The device's footprint is as small as 0.01 μm2. This modulator consumes low power and can potentially be ultrafast.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra-compact modulator based on Epsilon-Near-Zero metamaterial\",\"authors\":\"Longzhi Yang, T. Hu, A. Shen, C. Pei, Bing-Xian Yang, T. Dai, Hui Yu, Yubo Li, Xiaoqing Jiang, Jianyi Yang\",\"doi\":\"10.1109/NUSOD.2014.6935349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an ultra-compact modulator with a length of 15 nm by utilizing the squeezing and tunneling ability of the Epsilon-Near-Zero metamaterial. The finite-different time-domain simulations show the insertion loss is roughly -0.27 dB while the 3-dB extinction ratio is obtained with a 0.8 V gate voltage. The device's footprint is as small as 0.01 μm2. This modulator consumes low power and can potentially be ultrafast.\",\"PeriodicalId\":114800,\"journal\":{\"name\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"volume\":\"141 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2014.6935349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-compact modulator based on Epsilon-Near-Zero metamaterial
We present an ultra-compact modulator with a length of 15 nm by utilizing the squeezing and tunneling ability of the Epsilon-Near-Zero metamaterial. The finite-different time-domain simulations show the insertion loss is roughly -0.27 dB while the 3-dB extinction ratio is obtained with a 0.8 V gate voltage. The device's footprint is as small as 0.01 μm2. This modulator consumes low power and can potentially be ultrafast.