{"title":"a-Si与c-Si材料与太阳能电池的异同","authors":"J. Furlan, S. Amon, F. Smole, D. Sencar","doi":"10.1109/MELCON.1989.49996","DOIUrl":null,"url":null,"abstract":"It is shown that the design considerations for c-Si (crystalline silicon) solar cells greatly differ from those for a-Si (amorphous silicon) cells. Due to inherent atomic disorder, the a-Si material has a large and continuous distribution of gap states having a profound effect on the internal physical properties of a-Si material and on the resulting electrical properties of solar cell terminals. The design rules utilized in designing efficient c-Si cells cannot be used for optimization of the internal structures of a-Si solar cells, and conversely, the design considerations for a-Si cells do not apply to c-Si solar cell structures.<<ETX>>","PeriodicalId":380214,"journal":{"name":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","volume":"200 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"a-Si versus c-Si material and solar cells similarities and differences\",\"authors\":\"J. Furlan, S. Amon, F. Smole, D. Sencar\",\"doi\":\"10.1109/MELCON.1989.49996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown that the design considerations for c-Si (crystalline silicon) solar cells greatly differ from those for a-Si (amorphous silicon) cells. Due to inherent atomic disorder, the a-Si material has a large and continuous distribution of gap states having a profound effect on the internal physical properties of a-Si material and on the resulting electrical properties of solar cell terminals. The design rules utilized in designing efficient c-Si cells cannot be used for optimization of the internal structures of a-Si solar cells, and conversely, the design considerations for a-Si cells do not apply to c-Si solar cell structures.<<ETX>>\",\"PeriodicalId\":380214,\"journal\":{\"name\":\"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',\",\"volume\":\"200 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MELCON.1989.49996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.1989.49996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
a-Si versus c-Si material and solar cells similarities and differences
It is shown that the design considerations for c-Si (crystalline silicon) solar cells greatly differ from those for a-Si (amorphous silicon) cells. Due to inherent atomic disorder, the a-Si material has a large and continuous distribution of gap states having a profound effect on the internal physical properties of a-Si material and on the resulting electrical properties of solar cell terminals. The design rules utilized in designing efficient c-Si cells cannot be used for optimization of the internal structures of a-Si solar cells, and conversely, the design considerations for a-Si cells do not apply to c-Si solar cell structures.<>