应变量子阱异质结构:980 nm的建模与仿真

ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575) Pub Date : 2002-12-19 DOI:10.1109/SMELEC.2002.1217834

H. Mun, M. Muhamad

{"title":"应变量子阱异质结构:980 nm的建模与仿真","authors":"H. Mun, M. Muhamad","doi":"10.1109/SMELEC.2002.1217834","DOIUrl":null,"url":null,"abstract":"The work concerns the study of a 980-nm strained quantum well (QW) laser diode which is suitable for pumping Er/sup 3+/ doped fiber amplifiers. The concept of a strained QW in the design of the active layer of the laser diode is reviewed. A model of 980-nm strained multiple quantum-well (MQW) with InGaAs/GaAs active medium has been simulated. The simulation results include the comparison of optical gain between the transverse electric (TE) mode and transverse magnetic (TM) mode using carrier concentration as a parameter, the role of strain in QW and the field distribution across the direction of the epitaxial growth of heterostructure. Within the spectral range of 1.20-1.40 eV (wavelength 886-1034 nm), the results are reasonable and consistent with the basic principles employed in the optical properties of quantum well lasers.","PeriodicalId":211819,"journal":{"name":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Strained quantum well heterostructure: modeling and simulation of 980 nm\",\"authors\":\"H. Mun, M. Muhamad\",\"doi\":\"10.1109/SMELEC.2002.1217834\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work concerns the study of a 980-nm strained quantum well (QW) laser diode which is suitable for pumping Er/sup 3+/ doped fiber amplifiers. The concept of a strained QW in the design of the active layer of the laser diode is reviewed. A model of 980-nm strained multiple quantum-well (MQW) with InGaAs/GaAs active medium has been simulated. The simulation results include the comparison of optical gain between the transverse electric (TE) mode and transverse magnetic (TM) mode using carrier concentration as a parameter, the role of strain in QW and the field distribution across the direction of the epitaxial growth of heterostructure. Within the spectral range of 1.20-1.40 eV (wavelength 886-1034 nm), the results are reasonable and consistent with the basic principles employed in the optical properties of quantum well lasers.\",\"PeriodicalId\":211819,\"journal\":{\"name\":\"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2002.1217834\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2002.1217834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了一种适用于泵浦Er/sup +/掺杂光纤放大器的980 nm应变量子阱(QW)激光二极管。本文综述了应变量子阱在激光二极管有源层设计中的概念。利用InGaAs/GaAs活性介质模拟了980 nm应变多量子阱(MQW)模型。仿真结果包括以载流子浓度为参数比较横向电(TE)模式和横向磁(TM)模式的光增益、应变在量子阱中的作用以及异质结构外延生长方向上的场分布。在1.20 ~ 1.40 eV(波长886 ~ 1034 nm)的光谱范围内，所得结果是合理的，符合量子阱激光器光学特性的基本原理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Strained quantum well heterostructure: modeling and simulation of 980 nm

The work concerns the study of a 980-nm strained quantum well (QW) laser diode which is suitable for pumping Er/sup 3+/ doped fiber amplifiers. The concept of a strained QW in the design of the active layer of the laser diode is reviewed. A model of 980-nm strained multiple quantum-well (MQW) with InGaAs/GaAs active medium has been simulated. The simulation results include the comparison of optical gain between the transverse electric (TE) mode and transverse magnetic (TM) mode using carrier concentration as a parameter, the role of strain in QW and the field distribution across the direction of the epitaxial growth of heterostructure. Within the spectral range of 1.20-1.40 eV (wavelength 886-1034 nm), the results are reasonable and consistent with the basic principles employed in the optical properties of quantum well lasers.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)

自引率

0.00%

发文量