BJT SPICE模型辐射参数的剂量率和辐照温度依赖性

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698893

X. Montagner, R. Briand, P. Fouillat, peixiong zhao, A. Touboui, K. Galloway, M. Calvet, P. Calvel

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引用次数: 11

摘要

通过对BJT - SPICE模型中引入的4个新的辐射参数的分析，探讨了高剂量率高温辐照下双极晶体管低剂量率退化的预测方法。这种改进的BST模型能很准确地描述辐射引起的过量基极电流。低水平的辐射参数值对辐射引起的退化具有很高的敏感性，是评价所提出的高温试验方法的良好工具。

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Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters

A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BST model describes the radiation-induced excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temperature test method because of their high sensitivity to radiation-induced degradation.

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来源期刊

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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