{"title":"采用CMOS工艺的低功耗电流模带隙参考电路","authors":"Wang Xing-hua, Zhong Shun-an, Zhao Qi, Qu Ruoyuan","doi":"10.1109/SMELEC.2010.5549412","DOIUrl":null,"url":null,"abstract":"A low power design of CMOS bandgap reference of current mode used in analog-to-digital converter is proposed to obtain stable reference current and voltage. It realizes low power by one-order temperature compensation, resistance startup block, optimized internal operational amplifier and a new designed reference voltage buffer instead of closed loop. Under SMIC CMOS 0.35um 1P6M process and simulated by Spectre in Cadence, the circuit offers the current output of 50uA and the voltage output of 0.95V, 2V and 2.6v with a temperature coefficient of 50×10−6°−1 in the range of −40∼125°C. With the 3.3V supply, the power in test is lower than 0.2mW.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low power current mode bandgap reference circuit with CMOS process\",\"authors\":\"Wang Xing-hua, Zhong Shun-an, Zhao Qi, Qu Ruoyuan\",\"doi\":\"10.1109/SMELEC.2010.5549412\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low power design of CMOS bandgap reference of current mode used in analog-to-digital converter is proposed to obtain stable reference current and voltage. It realizes low power by one-order temperature compensation, resistance startup block, optimized internal operational amplifier and a new designed reference voltage buffer instead of closed loop. Under SMIC CMOS 0.35um 1P6M process and simulated by Spectre in Cadence, the circuit offers the current output of 50uA and the voltage output of 0.95V, 2V and 2.6v with a temperature coefficient of 50×10−6°−1 in the range of −40∼125°C. With the 3.3V supply, the power in test is lower than 0.2mW.\",\"PeriodicalId\":308501,\"journal\":{\"name\":\"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2010.5549412\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2010.5549412","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
为了获得稳定的参考电流和电压,提出了一种用于模数转换器的低功耗CMOS电流模式带隙参考电路设计。它通过一阶温度补偿、电阻启动块、优化的内部运算放大器和新设计的参考电压缓冲器代替闭环来实现低功耗。该电路采用中芯国际CMOS 0.35um 1P6M工艺,并由Spectre in Cadence进行仿真,输出电流为50uA,输出电压为0.95V、2V和2.6v,温度系数为50×10−6°−1,范围为−40 ~ 125°C。在3.3V电源下,测试功率低于0.2mW。
Low power current mode bandgap reference circuit with CMOS process
A low power design of CMOS bandgap reference of current mode used in analog-to-digital converter is proposed to obtain stable reference current and voltage. It realizes low power by one-order temperature compensation, resistance startup block, optimized internal operational amplifier and a new designed reference voltage buffer instead of closed loop. Under SMIC CMOS 0.35um 1P6M process and simulated by Spectre in Cadence, the circuit offers the current output of 50uA and the voltage output of 0.95V, 2V and 2.6v with a temperature coefficient of 50×10−6°−1 in the range of −40∼125°C. With the 3.3V supply, the power in test is lower than 0.2mW.