带有片上光学检测的CMOS微机械夹持器阵列

M.S.-C. Lu, Chi-En Lu, Zhong-Hong Wu, Chun‐Fu Chen, Shi-Yu Huang, Y. King
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引用次数: 3

摘要

本文介绍了带有片上光学检测的CMOS微机械夹持器的设计、制造和特性。CMOS MEMS制造的特点是金属湿式蚀刻和牺牲多晶硅蚀刻相结合,以实现结构释放。所制造的微结构包含金属和介电层,以及用于电热驱动的多晶硅加热器。光学检测由放置在夹持部位下方的光电探测器提供。200 μ m长的微夹持器的动态特性显示测量的热时间常数为53 μ m。当应用功率为6 mW时,夹持器的一只手臂产生3.6 μ m的面内位移和1.6 μ m的面外位移。相应的加热器最高温度为220℃,而尖端的温度标高仅为28℃。光电探测器的灵敏度和动态范围分别为1.42 V/lux-sec和48.5 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A CMOS Micromachined Gripper Array with On-Chip Optical Detection
This paper presents the design, fabrication, and characterization of CMOS micromachined grippers with on-chip optical detection. The CMOS MEMS fabrication features a combination of metal wet etch and sacrificial polysilicon etch for structural release. The fabricated microstructure contains metal and dielectric layers, plus a polysilicon heater for electrothermal actuation. Optical detection is provided by the photo detectors placed beneath the gripping sites. Dynamic characterization of a 200 mum-long microgripper shows a measured thermal time constant of 53 mus. For an applied power of 6 mW, one arm of the gripper produces a 3.6-mum in-plane displacement and a 1.6-mum out-of-plane displacement. The corresponding maximum heater temperature is 220degC, while the temperature elevation at the tip is only 28degC. The measured sensitivity and dynamic range of the photo detector are 1.42 V/lux-sec and 48.5 dB, respectively.
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