{"title":"GaAs FET击穿的波形分析","authors":"Y. Tkachenko, J. Bao, C. Wei, J.C.M. Hwang","doi":"10.1109/ARFTG.1995.327118","DOIUrl":null,"url":null,"abstract":"Drain-gate breakdown of GaAs metal-semiconductor-field-effect transistors (MESFETs) was analyzed using high frequency waveform probing. Peak dmin-gate voltage was theoretically and experhentally found to be a determining breakdown factor. The impact ionization induced conduction component of the gate and drain current of pinched-off MESFET at RF was found to correspond to the dc breakdown currents. The transit time of 30 ps was obtained for the impact ionization generated electrons to travel from gate to drain. This yields the hot electron drift velocity of 4.3 X 106 cm/s which is in good agreement with the published data.","PeriodicalId":118150,"journal":{"name":"IEEE Princeton Section Sarnoff Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Waveform analysis of GaAs FET breakdown\",\"authors\":\"Y. Tkachenko, J. Bao, C. Wei, J.C.M. Hwang\",\"doi\":\"10.1109/ARFTG.1995.327118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Drain-gate breakdown of GaAs metal-semiconductor-field-effect transistors (MESFETs) was analyzed using high frequency waveform probing. Peak dmin-gate voltage was theoretically and experhentally found to be a determining breakdown factor. The impact ionization induced conduction component of the gate and drain current of pinched-off MESFET at RF was found to correspond to the dc breakdown currents. The transit time of 30 ps was obtained for the impact ionization generated electrons to travel from gate to drain. This yields the hot electron drift velocity of 4.3 X 106 cm/s which is in good agreement with the published data.\",\"PeriodicalId\":118150,\"journal\":{\"name\":\"IEEE Princeton Section Sarnoff Symposium\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Princeton Section Sarnoff Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.1995.327118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Princeton Section Sarnoff Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1995.327118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
利用高频波形探测分析了砷化镓金属半导体场效应晶体管(mesfet)的漏极击穿。从理论上和技术上发现峰值门电压是一个决定性的击穿因素。在射频处，掐断MESFET的栅极和漏极电流的冲击电离诱导导通分量与直流击穿电流相对应。碰撞电离产生的电子从栅极到漏极的传递时间为30 ps。得到的热电子漂移速度为4.3 X 106 cm/s，与已发表的数据吻合较好。
Drain-gate breakdown of GaAs metal-semiconductor-field-effect transistors (MESFETs) was analyzed using high frequency waveform probing. Peak dmin-gate voltage was theoretically and experhentally found to be a determining breakdown factor. The impact ionization induced conduction component of the gate and drain current of pinched-off MESFET at RF was found to correspond to the dc breakdown currents. The transit time of 30 ps was obtained for the impact ionization generated electrons to travel from gate to drain. This yields the hot electron drift velocity of 4.3 X 106 cm/s which is in good agreement with the published data.
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