{"title":"SiGe中的245ghz次谐波接收机","authors":"Y. Mao, K. Schmalz, J. Borngraber, J. Scheytt","doi":"10.1109/MWSYM.2013.6697429","DOIUrl":null,"url":null,"abstract":"A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single-side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"245 GHz subharmonic receiver in SiGe\",\"authors\":\"Y. Mao, K. Schmalz, J. Borngraber, J. Scheytt\",\"doi\":\"10.1109/MWSYM.2013.6697429\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single-side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW.\",\"PeriodicalId\":243164,\"journal\":{\"name\":\"2012 7th European Microwave Integrated Circuit Conference\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2013.6697429\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single-side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW.
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