{"title":"SIMOX氧化物中显性空穴捕获中心的直接实验证据","authors":"J. F. Conley, P. Lenahan, P. Roitman","doi":"10.1109/SOSSOI.1990.145763","DOIUrl":null,"url":null,"abstract":"Experimental evidence is presented that indicates that E' centers or E'-like centers play an important role in hole trapping in SIMOX (separation by implantation of oxygen) oxides. The E' center is a silicon atom back-bonded to three oxygen atoms; in thermally grown SiO/sub 2/ films on silicon it is the dominant deep hole trap and is almost certainly a hole trapped in an oxygen vacancy. The SIMOX samples used had buried oxides approximately 4000 AA thick. The trapping was explored using a combination of electron paramagnetic resonance (EPR) and vacuum ultraviolet (hc/ lambda =10.2 eV) and ultraviolet (hc/ lambda =5 eV) irradiation sequences.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Direct experimental evidence for a dominant hole trapping center in SIMOX oxides\",\"authors\":\"J. F. Conley, P. Lenahan, P. Roitman\",\"doi\":\"10.1109/SOSSOI.1990.145763\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental evidence is presented that indicates that E' centers or E'-like centers play an important role in hole trapping in SIMOX (separation by implantation of oxygen) oxides. The E' center is a silicon atom back-bonded to three oxygen atoms; in thermally grown SiO/sub 2/ films on silicon it is the dominant deep hole trap and is almost certainly a hole trapped in an oxygen vacancy. The SIMOX samples used had buried oxides approximately 4000 AA thick. The trapping was explored using a combination of electron paramagnetic resonance (EPR) and vacuum ultraviolet (hc/ lambda =10.2 eV) and ultraviolet (hc/ lambda =5 eV) irradiation sequences.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145763\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145763","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Direct experimental evidence for a dominant hole trapping center in SIMOX oxides
Experimental evidence is presented that indicates that E' centers or E'-like centers play an important role in hole trapping in SIMOX (separation by implantation of oxygen) oxides. The E' center is a silicon atom back-bonded to three oxygen atoms; in thermally grown SiO/sub 2/ films on silicon it is the dominant deep hole trap and is almost certainly a hole trapped in an oxygen vacancy. The SIMOX samples used had buried oxides approximately 4000 AA thick. The trapping was explored using a combination of electron paramagnetic resonance (EPR) and vacuum ultraviolet (hc/ lambda =10.2 eV) and ultraviolet (hc/ lambda =5 eV) irradiation sequences.<>
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