用于0.24 THz以上可重构反射射线的高增益主动反射移相器

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2023-01-22 DOI:10.1109/SiRF56960.2023.10046266

E. Kunakovskaya, A. Ulusoy

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引用次数: 0

摘要

本文提出了一种基于反射放大器拓扑结构的高频高增益反射型移相器。放大器内的晶体管开关充当相移部分，可以进行数字控制，并提供1位相位分辨率。所制备的移相器采用0.13 $\mu$ msig HBT技术实现，在257.5 GHz时，两种工作状态下的反射增益为10.2/10.9 dB，相位变化为179°。移相磁芯仅占集成电路面积的0.007 mm2。

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An Active Reflection Phase Shifter with High Gain for Reconfigurable Reflectarrays above 0.24 THz

This work presents a high frequency, high gain reflection-type phase shifter based on a reflection amplifier topology. A transistor switch within the amplifier acts as the phase-shifting part that can be digitally controlled and provides 1-bit phase resolution. The fabricated phase shifter is implemented in 0.13 $\mu$mSiGe HBT technology, and the measured results show a reflection gain of 10.2/10.9 dB in two operational states with a phase change of 179° at 257.5 GHz. The phase-shifter core occupies only 0.007 mm2 of IC area.

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2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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