90nm数字CMOS中具有- 74dBc参考杂散抑制的杂散频率增强锁相环

M. Elsayed, Mohammed M. Abdul-Latif, E. Sánchez-Sinencio
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引用次数: 5

摘要

提出了一种设计低参考杂散锁相环的体系结构方案。在相频检测器和电荷泵之间插入一个杂散增频块,以提高电荷泵的输入频率。因此,参考马刺理论上消失了。所提出的技术在锁相环的设计中增加了额外的自由度,在不牺牲环路带宽和压控振荡器增益的情况下降低杂散电平。采用UMC 90nm数字CMOS技术制作了原型,在fBW/fref比为1/20的情况下,实现了- 74dBc参考杂散抑制以及(KVCO/fref)比为17。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Spur-Frequency-Boosting PLL with a −74dBc reference-spur rejection in 90nm digital CMOS
An architectural solution for designing a low-reference-spur PLL is presented. A spur frequency-booster block is inserted between the phase-frequency-detector and the charge pump to boost the charge pump's input frequency. Hence, the reference-spurs theoretically vanish. The proposed technique adds additional degrees of freedom in the design of PLLs to reduce the spur level without sacrificing neither the loop bandwidth nor the voltage-controlled oscillator's gain. A prototype is fabricated using UMC 90nm digital CMOS technology and achieves −74dBc reference-spur suppression along with (KVCO/fref) ratio of 17 at a (fBW/fref) ratio of 1/20.
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