M. Contreras, H. Wiesner, D. Niles, K. Ramanathan, R. Matson, J. Tuttle, J. Keane, R. Noufi
{"title":"缺陷黄铜矿Cu(In/sub 1-x/Ga/sub x/)/sub 3/Se/sub 5/材料和高Ga含量Cu(In,Ga)Se/sub 2/基太阳能电池","authors":"M. Contreras, H. Wiesner, D. Niles, K. Ramanathan, R. Matson, J. Tuttle, J. Keane, R. Noufi","doi":"10.1109/PVSC.1996.564251","DOIUrl":null,"url":null,"abstract":"Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In/sub 1-x/Ga)/sub 3/Se/sub 5/ (0<x<1) materials in polycrystalline thin-film form are reported. Also, an energy band alignment between such materials and CdS has been calculated from X-ray photoelectron spectroscopy data. A comparison of some properties against published data on similarly prepared chalcopyrite CuIn/sub 1-x/Ga/sub x/Se/sub 2/ absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, we postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character-both structural and electrical-at the very chalcopyrite/defect chalcopyrite interface. We demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Defect chalcopyrite Cu(In/sub 1-x/Ga/sub x/)/sub 3/Se/sub 5/ materials and high Ga-content Cu(In,Ga)Se/sub 2/-based solar cells\",\"authors\":\"M. Contreras, H. Wiesner, D. Niles, K. Ramanathan, R. Matson, J. Tuttle, J. Keane, R. Noufi\",\"doi\":\"10.1109/PVSC.1996.564251\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In/sub 1-x/Ga)/sub 3/Se/sub 5/ (0<x<1) materials in polycrystalline thin-film form are reported. Also, an energy band alignment between such materials and CdS has been calculated from X-ray photoelectron spectroscopy data. A comparison of some properties against published data on similarly prepared chalcopyrite CuIn/sub 1-x/Ga/sub x/Se/sub 2/ absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, we postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character-both structural and electrical-at the very chalcopyrite/defect chalcopyrite interface. We demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.\",\"PeriodicalId\":410394,\"journal\":{\"name\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1996.564251\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.564251","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Defect chalcopyrite Cu(In/sub 1-x/Ga/sub x/)/sub 3/Se/sub 5/ materials and high Ga-content Cu(In,Ga)Se/sub 2/-based solar cells
Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In/sub 1-x/Ga)/sub 3/Se/sub 5/ (00.3) is due to a relatively inferior character-both structural and electrical-at the very chalcopyrite/defect chalcopyrite interface. We demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.
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