{"title":"一种用于智能温度传感器的高线性热敏延迟线","authors":"N. Trung, Kwansu Shon, Soo-Won Kim","doi":"10.1109/MWSCAS.2007.4488716","DOIUrl":null,"url":null,"abstract":"A highly linear thermal sensitivity delay line for smart temperature sensor is presented. The proposed delay line is a current starved inverter chain. A simple bias current source circuit is incorporated with the delay line to generate a current inversely proportional to temperature based on the transconductance characteristics of a MOS device at the vicinity of the zero temperature coefficient (ZTC) point. Simulation results in a 0.18 mum CMOS technology show that the proposed delay line has a higher linearity within 0.24degC in a wider temperature range from -40degC to 120degC compared with conventional structures.","PeriodicalId":256061,"journal":{"name":"2007 50th Midwest Symposium on Circuits and Systems","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A delay line with highly linear thermal sensitivity for smart temperature sensor\",\"authors\":\"N. Trung, Kwansu Shon, Soo-Won Kim\",\"doi\":\"10.1109/MWSCAS.2007.4488716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly linear thermal sensitivity delay line for smart temperature sensor is presented. The proposed delay line is a current starved inverter chain. A simple bias current source circuit is incorporated with the delay line to generate a current inversely proportional to temperature based on the transconductance characteristics of a MOS device at the vicinity of the zero temperature coefficient (ZTC) point. Simulation results in a 0.18 mum CMOS technology show that the proposed delay line has a higher linearity within 0.24degC in a wider temperature range from -40degC to 120degC compared with conventional structures.\",\"PeriodicalId\":256061,\"journal\":{\"name\":\"2007 50th Midwest Symposium on Circuits and Systems\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 50th Midwest Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2007.4488716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 50th Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2007.4488716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
提出了一种用于智能温度传感器的高线性热敏延迟线。所提出的延迟线是一个电流匮乏的逆变器链。利用MOS器件在零温度系数(ZTC)点附近的跨导特性,将一个简单的偏置电流源电路与延迟线结合,产生与温度成反比的电流。在0.18 μ m CMOS技术上的仿真结果表明,与传统结构相比,该延迟线在-40 ~ 120℃的温度范围内具有更高的0.24℃线性度。
A delay line with highly linear thermal sensitivity for smart temperature sensor
A highly linear thermal sensitivity delay line for smart temperature sensor is presented. The proposed delay line is a current starved inverter chain. A simple bias current source circuit is incorporated with the delay line to generate a current inversely proportional to temperature based on the transconductance characteristics of a MOS device at the vicinity of the zero temperature coefficient (ZTC) point. Simulation results in a 0.18 mum CMOS technology show that the proposed delay line has a higher linearity within 0.24degC in a wider temperature range from -40degC to 120degC compared with conventional structures.