{"title":"一个32位GaAs IEEE浮点乘法器,使用尾位-1的舍入算法","authors":"S. Cui, N. Burgess, M. Liebelt, K. Eshraghian","doi":"10.1109/ETD.1995.403466","DOIUrl":null,"url":null,"abstract":"The paper presents a GaAs 32-bit IEEE floating point multiplier. A modified carry save array is used in conjunction with Booth's algorithm to reduce the partial product addition and interconnection. A special rounding technique called Trailing-1's Predictor is used to speed up the final addition and rounding. This chip uses a new layout methodology for easy design structure and improved GaAs technology layout density. The combination of the fast arithmetic architecture and compact layout style achieves 4ns multiplication time with 3.5 W power dissipation at 75/spl deg/C. The area is 2.43 mm by 3.77 mm (excluding pads) and uses 28000 transistors to give a density of 3056 transistors/mm/sup 2/ for 0.8/spl mu/m GaAs technology.<<ETX>>","PeriodicalId":302763,"journal":{"name":"Proceedings Electronic Technology Directions to the Year 2000","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 32-bit GaAs IEEE floating point multiplier using Trailing-1's rounding algorithm\",\"authors\":\"S. Cui, N. Burgess, M. Liebelt, K. Eshraghian\",\"doi\":\"10.1109/ETD.1995.403466\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a GaAs 32-bit IEEE floating point multiplier. A modified carry save array is used in conjunction with Booth's algorithm to reduce the partial product addition and interconnection. A special rounding technique called Trailing-1's Predictor is used to speed up the final addition and rounding. This chip uses a new layout methodology for easy design structure and improved GaAs technology layout density. The combination of the fast arithmetic architecture and compact layout style achieves 4ns multiplication time with 3.5 W power dissipation at 75/spl deg/C. The area is 2.43 mm by 3.77 mm (excluding pads) and uses 28000 transistors to give a density of 3056 transistors/mm/sup 2/ for 0.8/spl mu/m GaAs technology.<<ETX>>\",\"PeriodicalId\":302763,\"journal\":{\"name\":\"Proceedings Electronic Technology Directions to the Year 2000\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings Electronic Technology Directions to the Year 2000\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ETD.1995.403466\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Electronic Technology Directions to the Year 2000","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETD.1995.403466","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 32-bit GaAs IEEE floating point multiplier using Trailing-1's rounding algorithm
The paper presents a GaAs 32-bit IEEE floating point multiplier. A modified carry save array is used in conjunction with Booth's algorithm to reduce the partial product addition and interconnection. A special rounding technique called Trailing-1's Predictor is used to speed up the final addition and rounding. This chip uses a new layout methodology for easy design structure and improved GaAs technology layout density. The combination of the fast arithmetic architecture and compact layout style achieves 4ns multiplication time with 3.5 W power dissipation at 75/spl deg/C. The area is 2.43 mm by 3.77 mm (excluding pads) and uses 28000 transistors to give a density of 3056 transistors/mm/sup 2/ for 0.8/spl mu/m GaAs technology.<>