超低直流功耗In-P HITFET差分振荡器

Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521) Pub Date : 2004-05-12 DOI:10.1109/MELCON.2004.1346800

M. Camprini, A. Cidronali, I. Magrini, G. Collodi, L. Costanzo, G. Manes

{"title":"超低直流功耗In-P HITFET差分振荡器","authors":"M. Camprini, A. Cidronali, I. Magrini, G. Collodi, L. Costanzo, G. Manes","doi":"10.1109/MELCON.2004.1346800","DOIUrl":null,"url":null,"abstract":"The monolithic integration of tunneling diodes (TDs) with other conventional semiconductor devices gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic negative differential resistance (NDR) of TDs. In this paper, we present the design of a differential oscillator based on InP-HEMT/TD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of 1.1mA at 500mV and generates an output power of -9.0 dBm on a 50/spl Omega/ load.","PeriodicalId":164818,"journal":{"name":"Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra low DC power consumption In-P HITFET based differential oscillator\",\"authors\":\"M. Camprini, A. Cidronali, I. Magrini, G. Collodi, L. Costanzo, G. Manes\",\"doi\":\"10.1109/MELCON.2004.1346800\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The monolithic integration of tunneling diodes (TDs) with other conventional semiconductor devices gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic negative differential resistance (NDR) of TDs. In this paper, we present the design of a differential oscillator based on InP-HEMT/TD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of 1.1mA at 500mV and generates an output power of -9.0 dBm on a 50/spl Omega/ load.\",\"PeriodicalId\":164818,\"journal\":{\"name\":\"Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521)\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MELCON.2004.1346800\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.2004.1346800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

隧道二极管(TDs)与其他传统半导体器件的单片集成，利用TDs的固有负差分电阻(NDR)，为设计超低直流功耗电路提供了机会。本文设计了一种基于InP-HEMT/TD技术的差分振荡器。该电路基于一对锁相5.8 GHz压控振荡器。每个压控振荡器在500mV时产生1.1mA的电流，在50/spl ω /负载下产生-9.0 dBm的输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Ultra low DC power consumption In-P HITFET based differential oscillator

The monolithic integration of tunneling diodes (TDs) with other conventional semiconductor devices gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic negative differential resistance (NDR) of TDs. In this paper, we present the design of a differential oscillator based on InP-HEMT/TD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of 1.1mA at 500mV and generates an output power of -9.0 dBm on a 50/spl Omega/ load.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521)

自引率

0.00%

发文量