体硅中离子杂质散射过程的蒙特卡罗模拟

Nanodesign, Technology, and Computer Simulations Pub Date : 2008-07-11 DOI:10.1117/12.837084

D. Speransky

{"title":"体硅中离子杂质散射过程的蒙特卡罗模拟","authors":"D. Speransky","doi":"10.1117/12.837084","DOIUrl":null,"url":null,"abstract":"The results of Monte-Carlo simulation of ionized impurity scattering processes in doped silicon are presented. Adequacy and efficiency of the application of Ridley model to the calculation of ionized impurity scattering rates and electron mobility is proved via comparison of the simulation results with known experimental data.","PeriodicalId":117315,"journal":{"name":"Nanodesign, Technology, and Computer Simulations","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Monte Carlo simulation of ionized impurity scattering process in bulk silicon\",\"authors\":\"D. Speransky\",\"doi\":\"10.1117/12.837084\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of Monte-Carlo simulation of ionized impurity scattering processes in doped silicon are presented. Adequacy and efficiency of the application of Ridley model to the calculation of ionized impurity scattering rates and electron mobility is proved via comparison of the simulation results with known experimental data.\",\"PeriodicalId\":117315,\"journal\":{\"name\":\"Nanodesign, Technology, and Computer Simulations\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanodesign, Technology, and Computer Simulations\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.837084\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanodesign, Technology, and Computer Simulations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.837084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

给出了掺杂硅中离子杂质散射过程的蒙特卡罗模拟结果。通过与已知实验数据的比较，证明了Ridley模型在计算电离杂质散射率和电子迁移率中的充分性和有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Monte Carlo simulation of ionized impurity scattering process in bulk silicon

The results of Monte-Carlo simulation of ionized impurity scattering processes in doped silicon are presented. Adequacy and efficiency of the application of Ridley model to the calculation of ionized impurity scattering rates and electron mobility is proved via comparison of the simulation results with known experimental data.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Nanodesign, Technology, and Computer Simulations

自引率

0.00%

发文量