基于开槽SIW的v波段可重构SPDT开关/分压器设计

Junchao Ji, Zhefan Chen, Xidong Wu, Jinfang Zhou
{"title":"基于开槽SIW的v波段可重构SPDT开关/分压器设计","authors":"Junchao Ji, Zhefan Chen, Xidong Wu, Jinfang Zhou","doi":"10.23919/USNC/URSI49741.2020.9321609","DOIUrl":null,"url":null,"abstract":"In this paper, a novel reconfigurable single-pole double-throw (SPDT) switch/power divider (PD) employing substrate-integrated waveguide (SIW) technology is presented for V-band applications. By controlling the dc-bias of PIN diodes, the proposed reconfigurable function can be achieved. Simulations show that, when functioned as a SPDT switch, the circuit exhibits an isolation of larger than 32 dB and an insertion loss of less than 1.4 dB from 58-62 GHz. On the other hand, a minimum insertion loss of 0.9 dB is calculated at 60 GHz when functioned as a 3-dB PD. The total area of the device is 3λ0 × 2.36λ0.","PeriodicalId":443426,"journal":{"name":"2020 IEEE USNC-CNC-URSI North American Radio Science Meeting (Joint with AP-S Symposium)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Design of V-band Reconfigurable SPDT Switch/Power Divider Based on Slotted SIW\",\"authors\":\"Junchao Ji, Zhefan Chen, Xidong Wu, Jinfang Zhou\",\"doi\":\"10.23919/USNC/URSI49741.2020.9321609\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel reconfigurable single-pole double-throw (SPDT) switch/power divider (PD) employing substrate-integrated waveguide (SIW) technology is presented for V-band applications. By controlling the dc-bias of PIN diodes, the proposed reconfigurable function can be achieved. Simulations show that, when functioned as a SPDT switch, the circuit exhibits an isolation of larger than 32 dB and an insertion loss of less than 1.4 dB from 58-62 GHz. On the other hand, a minimum insertion loss of 0.9 dB is calculated at 60 GHz when functioned as a 3-dB PD. The total area of the device is 3λ0 × 2.36λ0.\",\"PeriodicalId\":443426,\"journal\":{\"name\":\"2020 IEEE USNC-CNC-URSI North American Radio Science Meeting (Joint with AP-S Symposium)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE USNC-CNC-URSI North American Radio Science Meeting (Joint with AP-S Symposium)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/USNC/URSI49741.2020.9321609\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE USNC-CNC-URSI North American Radio Science Meeting (Joint with AP-S Symposium)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/USNC/URSI49741.2020.9321609","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文提出了一种基于基板集成波导(SIW)技术的新型可重构单极双掷(SPDT)开关/功率分配器(PD),用于v波段应用。通过控制PIN二极管的直流偏置,可以实现所提出的可重构功能。仿真结果表明,当用作SPDT开关时,该电路在58 ~ 62 GHz范围内的隔离度大于32 dB,插入损耗小于1.4 dB。另一方面,当作为3db PD工作时,在60ghz下计算出的最小插入损耗为0.9 dB。该装置的总面积为3λ0 × 2.36λ0。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Design of V-band Reconfigurable SPDT Switch/Power Divider Based on Slotted SIW
In this paper, a novel reconfigurable single-pole double-throw (SPDT) switch/power divider (PD) employing substrate-integrated waveguide (SIW) technology is presented for V-band applications. By controlling the dc-bias of PIN diodes, the proposed reconfigurable function can be achieved. Simulations show that, when functioned as a SPDT switch, the circuit exhibits an isolation of larger than 32 dB and an insertion loss of less than 1.4 dB from 58-62 GHz. On the other hand, a minimum insertion loss of 0.9 dB is calculated at 60 GHz when functioned as a 3-dB PD. The total area of the device is 3λ0 × 2.36λ0.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信