S. Samavedam, L. La, P. Tobin, B. White, C. Hobbs, L. Fonseca, A. Demkov, J. Schaeffer, E. Luckowski, A. Martínez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. García, S. Anderson, K. Moore, H. Tseng, C. Capasso, O. Adetutu, D. Gilmer, W. Taylor, R. Hegde, J. Grant
{"title":"亚单层MeOx和金属栅极的费米能级钉钉[mosfet]","authors":"S. Samavedam, L. La, P. Tobin, B. White, C. Hobbs, L. Fonseca, A. Demkov, J. Schaeffer, E. Luckowski, A. Martínez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. García, S. Anderson, K. Moore, H. Tseng, C. Capasso, O. Adetutu, D. Gilmer, W. Taylor, R. Hegde, J. Grant","doi":"10.1109/IEDM.2003.1269286","DOIUrl":null,"url":null,"abstract":"We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO/sub 2/, Al/sub 2/O/sub 3/ and HfO/sub 2/ for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]\",\"authors\":\"S. Samavedam, L. La, P. Tobin, B. White, C. Hobbs, L. Fonseca, A. Demkov, J. Schaeffer, E. Luckowski, A. Martínez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. García, S. Anderson, K. Moore, H. Tseng, C. Capasso, O. Adetutu, D. Gilmer, W. Taylor, R. Hegde, J. Grant\",\"doi\":\"10.1109/IEDM.2003.1269286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO/sub 2/, Al/sub 2/O/sub 3/ and HfO/sub 2/ for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]
We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO/sub 2/, Al/sub 2/O/sub 3/ and HfO/sub 2/ for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.
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