石墨烯场效应晶体管TCAD工具下的电路设计免费软件

F. Pasadas, A. Pacheco-Sánchez, N. Mavredakis, D. Jiménez
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引用次数: 0

摘要

我们提出了一种基于物理的石墨烯场效应晶体管(gfet)的紧凑模型,该模型能够在免费软件相当通用电路模拟器(qus)下运行,使任何用户都可以基于新兴的石墨烯技术进行电路模拟。该模型基于载流子输运的漂移扩散机制,并结合器件结构的静电解。本文展示了一个由基于gfet的气体传感器组成的示例应用的量子阱模拟,揭示了基于石墨烯和相关材料固有特性的新应用概念开发的计算机辅助设计(TCAD)工具的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Graphene field-effect transistor TCAD tool for circuit design under freeware
We present a physics-based compact model of graphene field-effect transistors (GFETs) able to be run under the freeware Quite Universal Circuit Simulator (QUCS), bringing the possibility to any user to undertake circuit simulations based on the emergent graphene technology. The model is based on the drift-diffusion mechanism for the carrier transport coupled with the solution of the electrostatics of the device structure. Simulations on QUCS of an exemplary application consisting of a GFET-based gas sensor are shown, bringing to light the potential of the technology computer-aided design (TCAD) tool developed for novel concepts of applications based on the inherent features of graphene and related materials.
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