900 MHz单片低噪声放大器射频性能的生产直流筛选

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470989

Sang-Gug Lee, R. D. Schultz

{"title":"900 MHz单片低噪声放大器射频性能的生产直流筛选","authors":"Sang-Gug Lee, R. D. Schultz","doi":"10.1109/MCS.1995.470989","DOIUrl":null,"url":null,"abstract":"Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Production DC screening for RF performance of a 900 MHz monolithic low noise amplifier\",\"authors\":\"Sang-Gug Lee, R. D. Schultz\",\"doi\":\"10.1109/MCS.1995.470989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"114 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

提出了900 MHz单片硅双极低噪声放大器的噪声系数和功率增益的直流筛选新方法。所提出的技术可用于通过对所使用的有源器件的交流性能设置限制来筛选任何RF IC的性能

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Production DC screening for RF performance of a 900 MHz monolithic low noise amplifier

Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

自引率

0.00%

发文量